US PATENT SUBCLASS 438 / 217
.~.~.~ Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
199  DF  .~.~ Complementary insulated gate field effect transistors (i.e., CMOS) {11}
217.~.~.~ Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)

DEFINITION

Classification: 438/217

Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.):

(under subclass 199) Process having a step of introducing an electrically active dopant species into the semiconductor active channel region beneath the gate insulator of at least one of the complementary insulated gate field effect transistors.


OSZAR »